30 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：132.82 Kbytes 页数：3 Pages

MCC

Schottky Barrier Rectifier

FEATURES • Dual Rectifier Conduction, Positive Center Tap • Low Power Loss/High Efficiency • High Current Capability • High Surge Capacity • Guarding for Overvoltage protection • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

文件：104.04 Kbytes 页数：1 Pages

ISC

无锡固电

Chips for Schottky Diodes

General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃operation junction temperature * reverse avalanche behavior

文件：76.06 Kbytes 页数：1 Pages

GSG

劲力半导体

Schottky Barrier Rectifier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：305.55 Kbytes 页数：3 Pages

PFS

平盛电子

30 Amp Schottky Barrier Rectifier 20 to 100 Volts

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：540.47 Kbytes 页数：3 Pages

GXELECTRONICS

星合电子

Dual Common Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperatu

文件：171.89 Kbytes 页数：4 Pages

SYC

Schottky Barrier Rectifiers

文件：2.37709 Mbytes 页数：2 Pages

JUXING

广东钜兴电子

Schottky Barrier Rectifiers

文件：236.7 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：MBR3045CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR3045FCT；Package：ITO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.0267 Mbytes 页数：3 Pages

RFE

RFE international