SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

文件：141.62 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Schottky Rectifier, 2 x 15 A

DESCRIPTION The MBR30..WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters

文件：113.94 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

30 Amp Schottky Barrier Rectifier 20 to 60 Volts

Features ● High Surge Capacity ● Low Power Loss, High Efficiency ● High Current Capability, Low VF ● Metal of silicon Rectifier, majority Carrier Conduction ● Guard Ring For Transient Protection ● Plastic Package Has UL Flammability Classification 94V-0

文件：1.19919 Mbytes 页数：2 Pages

MCC

Schottky Barrier Rectifier

FEATURES • Dual diode construction;terminals 1 and 3 may be connected for parallel operation at full rating • Low forward voltage • Guarding for stress protection • 150℃ operating junction temperature • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

文件：249.59 Kbytes 页数：2 Pages

ISC

无锡固电

Switch Mode Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

文件：66.85 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 may be Connected for Parallel Operation at Full Rating • Guardring for Stress Protection • Low Forward Voltage • 1

文件：141.62 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

Features: • 150 ℃ TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

文件：386.22 Kbytes 页数：7 Pages

SMC

桑德斯微电子

MBR3045WTP SCHOTTKY RECTIFIER

Features 150 C TJ operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts a

文件：299.89 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

Schottky Rectifier, 2 x 15 A

DESCRIPTION The VS-MBR30..WT... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, conv

文件：117 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

30 AMPERES SCHOTTKY BARRIER RECTIFIERS

文件：134.25 Kbytes 页数：4 Pages

PANJIT

強茂