SCHOTTKY BARRIER RECTIFIER

文件：113.81 Kbytes 页数：3 Pages

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

文件：362.14 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：MBR30200CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08283 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30200CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR30200CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international

SCHOTTKY BARRIER RECTIFIERS

Feaures High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) Low stored charge majority carrier conduction

文件：1.2985 Mbytes 页数：2 Pages

SUNMATE

森美特

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 30.0 Amperes FEATURES ● Metal-Semiconductor junction with guard ring ● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high frequency

文件：72.13 Kbytes 页数：2 Pages

CTC

沛伦

REVERSE VOLTAGE 40 to 200 Volts RORWARD CURRENT 30.0 Amperes

30A High Barrier Power Schottky Rectifiers - 40V-200V Features • 150°C operating junction temperature. • Low power loss, high efficiency. • High current capability • High surge capability. • Guardring for overvoltage protection. • Low stored charge majority carrier conduction • Silicon epi

文件：367.64 Kbytes 页数：2 Pages

FORMOSA

美丽微半导体

Schottky Barrier Rectifier

FEATURES • Plastic material used carriers Unerwriter Laboratory • Metal silicon rectifier, majonty carrier conduction • Low Power Loss,High Efficiency • Guard ring for transient protection • High Surge Capability,High Current Capability • 100 avalanche tested • Minimum Lot-to-Lot variations

文件：271.48 Kbytes 页数：2 Pages

ISC

无锡固电

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

文件：685.14 Kbytes 页数：3 Pages

JIANGSU

长电科技