丝印：MBR30200CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR30200CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08283 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30200CT；Package：TO-247；SCHOTTKY BARRIER RECTIFIER

Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH.

文件：989.7 Kbytes 页数：2 Pages

SY

顺烨电子

丝印：MBR30200CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30200CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08283 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30200CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR30200CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MDDMBR30200CT；Package：TO-220AB；SCHOTTKY BARRIER RECTIFIER

文件：569.03 Kbytes 页数：2 Pages

CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.40142 Mbytes 页数：2 Pages

SAMYANG

三阳电子

MBR30200CT/MBRB30200CT/MBR30200CT-1 SCHOTTKY RECTIFIER

Features 150 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr

文件：337.61 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子