SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 20 to 100 Volts CURRENT 30.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low

文件：767.93 Kbytes 页数：2 Pages

KERSEMI

Dual Schottky Barrier Rectifiers Reverse Voltage 100 Volts Forward Current 30.0 Amperes

Reverse Voltage 100 Volts Forward Current 30.0 Amperes Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Gua

文件：246.22 Kbytes 页数：3 Pages

FS

Dual Common Cathode High-Voltage Schottky Rectifier,

DESCRIPTION The MBR30100CT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. FEATURES ● 150°C TJ operation ● High frequency operation ● Low forward voltage drop

文件：198.04 Kbytes 页数：4 Pages

NELLSEMI

尼尔半导体

MBR30100CT/MBRB30100CT/MBR30100CT-1 SCHOTTKY RECTIFIER

        Features 175 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliab

文件：937.74 Kbytes 页数：6 Pages

SMCDIODE

桑德斯微电子

丝印：MBR30100CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage - 40 to 200 V Forward Current - 30 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220 • Approx. Weight:

文件：370.85 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

MBR30100CTL SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr

文件：292.38 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

MBR30100CTP SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fr

文件：798.45 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子

30.0 Amperes Heatsink Dual Common Anode Schottky Half Bridge Rectifiers

Features * Low forward voltage drop * Standard MBR matured technology with high reliablity * High current capability * High surge current capability * Low reverse leakage current Application * Automotive Inverters/Solar Inverters * Plating Power Supply,SMPS and UPS * Car Audio Amplifiers

文件：308.44 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

丝印：MBR30100CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international