丝印：MBR30100CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08283 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30100CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR30100CT；Package：TO-247；SCHOTTKY BARRIER RECTIFIER

Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH.

文件：989.7 Kbytes 页数：2 Pages

SY

顺烨电子

丝印：MBR30100CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30100CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08283 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30100CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR30100CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MDDMBR30100CT；Package：TO-220AB；SCHOTTKY BARRIER RECTIFIER

文件：539.78 Kbytes 页数：2 Pages

CHENDA

辰达半导体

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage d

文件：383.8 Kbytes 页数：2 Pages

DSK

SCHOTTKY BARRIER RECTIFIERS

Reverse Voltage - 40 to 200 V Forward Current - 30 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220 • Approx. Weight:

文件：370.85 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

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