丝印：MBR30100CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR30100CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08283 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30100CT；Package：TO-247；SCHOTTKY BARRIER RECTIFIER

Features Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Suffix H indicates Halogen-free part, ex.MBR3040BCTH.

文件：989.7 Kbytes 页数：2 Pages

SY

顺烨电子

丝印：MBR30100CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30100CT；Package：TO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.08283 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR30100CT；Package：TO-220AB；30A High Power Schottky Barrier Rectifiers

Features • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-free part, ex

文件：99.69 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：MBR30100CTS；Package：TO-220AB；Schottky Diodes

Features High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7's, per JESD 22-8106.

文件：2.42716 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MDDMBR30100CT；Package：TO-220AB；SCHOTTKY BARRIER RECTIFIER

文件：539.78 Kbytes 页数：2 Pages

CHENDA

辰达半导体

Dual Schottky Barrier Rectifiers Reverse Voltage 100 Volts Forward Current 30.0 Amperes

Reverse Voltage 100 Volts Forward Current 30.0 Amperes Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Gua

文件：246.22 Kbytes 页数：3 Pages

FS

SCHOTTKY BARRIER RECTIFIER

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

文件：1.93815 Mbytes 页数：3 Pages

JIANGSU

长电科技