丝印：MBR20200FCA；Package：ITO-220AB；20.0 Ampere Insulated Dual Common Anode Schottky Barrier Rectifiers

Features  Low forward voltage drop ThinkiSemi matured planar technology with high reliablity  High current capability  High surge current capability  Low reverse leakage current Application  Automotive Inverters and Solar Inverters  Plating Power Supply,SMPS,EPS and UPS  Car Audio

文件：828.94 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

丝印：MBR20200FCT；Package：ITO-220AB；20.0 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifiers

Features  Low forward voltage drop ThinkiSemi matured planar technology with high reliablity  High current capability  High surge current capability  Low reverse leakage current Application  Automotive Inverters and Solar Inverters  Plating Power Supply,SMPS,EPS and UPS  Car Audio

文件：863.44 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

丝印：MBR20200FCT；Package：ITO-220AB；Schottky Diodes

FEATURES High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106

文件：1.05832 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR20200FCTR；Package：ITO-220AB；20.0 Ampere Insulated Dual Common Anode Schottky Barrier Rectifiers

Features  Low forward voltage drop ThinkiSemi matured planar technology with high reliablity  High current capability  High surge current capability  Low reverse leakage current Application  Automotive Inverters and Solar Inverters  Plating Power Supply,SMPS,EPS and UPS  Car Audio

文件：828.15 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

丝印：MBR20200FCTS；Package：ITO-220AB；Schottky Diodes

Features High frequency operation | Low forward voltage drop | High purity, high temperature epoxy encapsulation for | enhanced mechanical strength and moisture resistance | Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7 s, per JESD 22-B106 |

文件：2.40562 Mbytes 页数：3 Pages

RFE

RFE international

丝印：MBR20200PT；Package：TO-247AB；Schottky Barrier Rectifiers

Productor Character Multilayer Metal -Silicon Potential Structure. Low Leakage Current. High Current Capability, High Efficiency. High Junction Temperature Capability. RoHs Product.

文件：225.28 Kbytes 页数：3 Pages

SY

顺烨电子

丝印：MBR20200DCT；Package：TO-220AB；SCHOTTKY RECTIFIERS

文件：463.44 Kbytes 页数：5 Pages

NIUHANG

纽航电子

丝印：MBR20200DFCT；Package：ITO-220AB；SCHOTTKY RECTIFIERS

文件：463.44 Kbytes 页数：5 Pages

NIUHANG

纽航电子

肖特基二极体

Sunmate

森美特

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.43339 Mbytes 页数：2 Pages

SAMYANG

三阳电子