SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.43339 Mbytes 页数：2 Pages

SAMYANG

三阳电子

SCHOTTKY BARRIER RECTIFIER

文件：603.16 Kbytes 页数：2 Pages

CHENDA

辰达半导体

Ultra-Fast Recovery Diodes 20A FRD Pt

Features ● Adopt FRD chip ● Low forward Voltage drop ● Fast reverse recovery time ● High frequency operation ● High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ● Guard ring for enhanced ruggedness and long term reliability Typical A

文件：2.334 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

文件：1.4314 Mbytes 页数：2 Pages

SAMYANG

三阳电子

100 V, precision, bidirectional current sense amplifier

Features • Wide common-mode voltage: -4 to 100 V • High common-mode rejection CMR: 100 dB min. • Offset voltage: ±150 μV max. • Offset drift: 0.5 μV/°C max. • Enhanced PWM rejection • 2.7 to 5.5 V supply voltage • Internal fixed gain – TSC2020: 20 V/V – TSC2021: 50 V/V – TSC2022: 100 V/V

文件：5.97976 Mbytes 页数：48 Pages

STMICROELECTRONICS

意法半导体