Metal of siliconrectifier, majonty carrier conducton

Features ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High surge capability ◇ For use in low voltage, high frequency

文件：839.93 Kbytes 页数：2 Pages

KERSEMI

Schottky Rectifier, 16 A

DESCRIPTION The MBR1645 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. FEATURES ● 150°C TJ operation ● High frequency operation ● Low forward voltage drop ●

文件：248.57 Kbytes 页数：5 Pages

NELLSEMI

尼尔半导体

SCHOTTKY BARRIER RECTIFIER

文件：293.67 Kbytes 页数：3 Pages

HORNBY

南通康比电子

16A SCHOTTKY BARRIER RECTIFIER

文件：79.68 Kbytes 页数：3 Pages

DIODES

美台半导体

16.0 AMPS. Schottky Barrier Rectifiers

文件：276.02 Kbytes 页数：2 Pages

TSC

台湾半导体

16.0 AMPS. Schottky Barrier Rectifiers

文件：247.26 Kbytes 页数：2 Pages

TSC

台湾半导体

16.0 AMPS. Schottky Barrier Rectifiers

文件：653.02 Kbytes 页数：2 Pages

TSC

台湾半导体

Low power loss, high efficiency

文件：81.3 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Tjm Low IRRM Schottky Barrier Diodes

文件：111.98 Kbytes 页数：2 Pages

SIRECTIFIER

矽莱克电子

16.0 Ampere Heatsink Type Single Schottky Barrier Rectifiers

文件：734.96 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体