Planar Schottky Diode

The MBR150 employs the 1.0A Schottky Barrier principlein a large area metal−to−silicon power diode. , it uses UTC’sadvancedState−of−the−art geometry epitaxialconstruction with oxide passivation and metal overlap contact.Ideally suited for use as rectifiers in low voltage, highfrequency inverters, free wheeling diodes, and polarityprotection diodes. FEATURES  Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High E;

UTC

友顺

1.0 A, 50 V, Schottky Barrier Rectifier

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, • Low Reverse Current\n• Low Stored Charge, Majority Carrier Conduction\n• Low Power Loss/High Efficiency\n• Highly Stable Oxide Passivated JunctionMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 0.4 gram (approximately)\n• Finish: All External Surfaces Corrosion Resistant and Terminal;

ONSEMI

安森美半导体

Package：DO-204AL，DO-41，轴向；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 50V 1A AXIAL

ONSEMI

安森美半导体

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：92.39 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：39.46 Kbytes 页数：2 Pages

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：35.03 Kbytes 页数：2 Pages

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：163.57 Kbytes 页数：3 Pages

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：152.45 Kbytes 页数：3 Pages

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：35.03 Kbytes 页数：2 Pages

HY

虹扬科技

SILICON BRIDGE RECTIFIERS

FEATURES ● Surge overload -240~500 amperes peak ● Low forward voltage drop ● Mounting position: Any ● Electrically isolated base -2000 Volts ● Solderable 0.25 FASTON terminals ● Materials used carries U/L recognition

文件：92.39 Kbytes 页数：2 Pages

GOOD-ARK

固锝电子