MBR150数据手册分立半导体产品的二极管-整流器-单规格书PDF
MBR150规格书详情
描述 Description
The MBR150 employs the 1.0A Schottky Barrier principlein a large area metal−to−silicon power diode. , it uses UTC’sadvancedState−of−the−art geometry
特性 Features
epitaxialconstruction with oxide passivation and metal overlap contact.Ideally suited for use as rectifiers in low voltage, highfrequency inverters, free wheeling diodes, and polarityprotection diodes. FEATURES Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction
技术参数
- 制造商编号
：MBR150
- 生产厂家
：UTC
- IO (A)
：1
- VRM(VR)(V)
：50
- IFSM(A)
：25
- VFMRatingMAX.(V)
：0.75
- VFMConditionsIF(A)
：1
- IRM(IR)RatingMAX.(μA)
：50
- IRM(IR)ConditionsVR(V)
：50
- Package
：DO-41
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MBR150 |
1205 |
1205 |
询价 | ||||
ONSEMI/安森美 |
24+ |
DO-41 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
询价 | ||
ONSEMI/安森美 |
24+ |
DO-41 |
60000 |
全新原装现货 |
询价 | ||
ONN |
2405+ |
原厂封装 |
707 |
只做原装优势现货库存 渠道可追溯 |
询价 | ||
ON |
22+ |
NA |
707 |
原装正品支持实单 |
询价 | ||
UTC/友顺 |
24+ |
DO-41 |
100000 |
原装现货 |
询价 | ||
MOT |
05+ |
原厂原装 |
4277 |
只做全新原装真实现货供应 |
询价 | ||
onsemi(安森美) |
24+ |
DO41 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ON |
24+/25+ |
2665 |
原装正品现货库存价优 |
询价 | |||
三年内 |
1983 |
只做原装正品 |
询价 |
