Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling

文件：132.03 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The MBR15.. center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling

文件：132.03 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODEE TM Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy

文件：42.05 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

文件：130.419 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifier

Features and Benefits • Center−Tap Configuration • Low Forward Voltage • Low Power Loss / High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 15 A Total (7.5 A Per Diode Leg) • Pb−Free Package is Available* Applications • Power Supply − Output Rectification • P

文件：96.9 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

SWITCHMODEE TM Power Rectifier

SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Epoxy

文件：42.05 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Low forward voltage drop

DESCRIPTION The VS-MBR(B)15... center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewh

文件：1.96723 Mbytes 页数：5 Pages

KERSEMI

Schottky Rectifier, 2 x 7.5 A

DESCRIPTION The VS-MBR15...CT... center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, free

文件：103.51 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier

DESCRIPTION The VS-MBR(B)15... center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewh

文件：132.03 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1545S SCHOTTKY RECTIFIER

Features Designed as Bypass Diodes for Solar Panels High Forward Surge Capability Ultra Low Forward Voltage Drop Excellent High Temperature Stability Terminals finish: 100 Pure Tin This is a Halogen Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered

文件：457.82 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子