MBR120资料datasheet下载市场行情第11页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MBR120L	文件：50.58 Kbytes Page：4 Pages	1.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Forward Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0 文件：50.58 Kbytes 页数：4 Pages	WTE Won-Top Electronics	WTE
MBR120LSF	文件：637.79 Kbytes Page：7 Pages	SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY POWER RECTIFIER DESCRIPTION The MBR120L SF is available in SOD 123 Package. FEATURES  Guarding for Stress Protection  Low Forward Voltage  125°C Operating Junction Temperature  Epoxy Meets UL 94V-0 @ 0.125 in  Package Designed for Optimal Automated Board Assembly  ESD Ratings: Machine Model, C 文件：637.79 Kbytes 页数：7 Pages	AITSEMI 创瑞科技	AITSEMI
MBR120LSF	文件：202.64 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system 文件：202.64 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MBR120LSF	文件：139.77 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system 文件：139.77 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MBR120LSF_V01	文件：202.64 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system 文件：202.64 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MBR120LSFT1G	文件：139.77 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system 文件：139.77 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MBR120LSFT1G	文件：202.64 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system 文件：202.64 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MBR120LSFT3G	文件：202.64 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier Plastic SOD-123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system 文件：202.64 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MBR120LSFT3G	文件：139.77 Kbytes Page：6 Pages	Surface Mount Schottky Power Rectifier This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system 文件：139.77 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
MBR120L-T1	文件：50.58 Kbytes Page：4 Pages	1.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE Very Low Forward Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application Plastic Material – UL Recognition Flammability Classification 94V-0 文件：50.58 Kbytes 页数：4 Pages	WTE Won-Top Electronics	WTE

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技术参数

AEC Qualified：
NO
Pb Free：
YES
Halide free：
YES
Reach：
YES
RoHS：
YES
Marketing Status：
Active
Configuration：
Single
VRRM(V)max.：
20
IF(A)max.：
1
VF (V)max：
0.75
IFSM(A)max.：
20
IR(uA)max.：
1000
TJ(°C)max.：
125
TJ(°C)min.：
-55
ECCN(US)：
EAR99
Category：
小信号肖特基二极管

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	MBR120	ON	24+		120000		询价
深圳市华斯顿科技有限公司	MBR120	ON	25+23+	SOD-123	30249	绝对原装正品全新进口深圳现货	询价
深圳市正纳电子有限公司	MBR120	ON(安森美)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
深圳市威尔健半导体有限公司	MBR120	KEFAN/科范微	23+	SOD-123FL	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	MBR120	ON	07+	SOT143	21	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛特兴科技有限公司	MBR120	ON	23+	SOT143	21	正规渠道,只有原装!	询价
深圳诚思涵科技有限公司	MBR120	ON(安森美)	23+	标准封装	5000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市旺财半导体有限公司	MBR120	ON	23+	SOD123	12000	正品原装货价格低	询价
深圳市华来深电子有限公司	MBR120	ON	23+	SOT143	8560	受权代理!全新原装现货特价热卖!	询价
深圳深宇韬电子科技有限公司	MBR120	ON	2023+	SOT143	8800	正品渠道现货终端可提供BOM表配单。	询价

更多MBR120供应商更新时间2026-2-9 15:30:00

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