Schottky Barrier Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B1

文件：152.68 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifier

文件：134.71 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Barrier Rectifiers

文件：255.85 Kbytes 页数：3 Pages

Good-Ark

固锝电子

Schottky Barrier Rectifiers Reverse Voltage 35 to 60 Volts , Forward Current 10.0 Amperes

文件：319.37 Kbytes 页数：3 Pages

FS

SCHOTTKY BARRIER RECTIFIER

文件：292.94 Kbytes 页数：3 Pages

HORNBY

南通康比电子

Schottky Barrier Rectifier

FEATURES • Power pack • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B1

文件：152.68 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY BARRIER RECTIFIER

REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u

文件：356.38 Kbytes 页数：3 Pages

HORNBY

南通康比电子

High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

文件：255.51 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum

文件：138.67 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximu

文件：255.51 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司