首页 >MBR10XXX-E3>规格书列表
| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MBR10XXX-E3 | High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
MBR10XXX-E3 | High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximu | VishayVishay Siliconix 威世科技威世科技半导体 | | |
High Voltage Trench MOS Barrier Schottky Rectifier Trench MOS Schottky technology\n Lower power losses, high efficiency\n Low forward voltage drop\n\n \n; | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowerpowerlosses,highefficiency •Lowforwardvoltagedrop •Highforwardsurgecapability •Highfrequencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof 245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximu | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
High Voltage Trench MOS Barrier Schottky Rectifier | VishayVishay Siliconix 威世科技威世科技半导体 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
3000 |
公司现货 |
询价 | |||
IR |
2016+ |
DO-41 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
17+ |
DO |
6200 |
100%原装正品现货 |
询价 | ||
ON |
23+ |
DO-41 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOT |
05+ |
原厂原装 |
21510 |
只做全新原装真实现货供应 |
询价 | ||
DIP |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
ON |
25+23+ |
DO-41 |
18704 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ON |
19+ |
DO-41 |
30000 |
原装正品,价格优 |
询价 | ||
VISHAY |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ON |
20+ |
38500 |
全新现货热卖中欢迎查询 |
询价 |
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