Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

文件：1.23714 Mbytes 页数：3 Pages

KERSEMI

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

文件：1.23716 Mbytes 页数：3 Pages

KERSEMI

Power Schottky Rectifier

文件：268.45 Kbytes 页数：4 Pages

SISEMICShenzhen SI Semiconductors Co.,LTD.

深爱半导体深圳深爱半导体股份有限公司

Dual Common Cathode High Voltage Schottky Rectifier

文件：154.78 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

10.0 AMPS. Schottky Barrier Rectifiers

文件：595.5 Kbytes 页数：2 Pages

TSC

台湾半导体

10.0AMPS. Schottky Barrier Rectifiers

文件：195.43 Kbytes 页数：2 Pages

TSC

台湾半导体

10.0AMPS. Schottky Barrier Rectifiers Low power loss, high efficiency

文件：224.39 Kbytes 页数：3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件：207.43 Kbytes 页数：4 Pages

TSC

台湾半导体

Schottky Barrier Diode in a TO-220 Plastic Package

文件：862.83 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

文件：162 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司