首页 >MBR10H100CT>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MBR10H100CT | SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp 文件:68.44 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MBR10H100CT | SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou 文件:133.12 Kbytes 页数:6 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MBR10H100CT | Dual Common-Cathode High-Voltage Schottky Rectifier Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H 文件:530.38 Kbytes 页数:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
MBR10H100CT | Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 文件:162 Kbytes 页数:5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
MBR10H100CT | 10.0 AMPS. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif 文件:1.30244 Mbytes 页数:2 Pages | TSC 台湾半导体 | TSC | |
MBR10H100CT | Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H 文件:78.47 Kbytes 页数:3 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
MBR10H100CT | SCHOTTKY BARRIER RECTIFIERS Features High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction 文件:515.179 Kbytes 页数:2 Pages | SUNMATE 森美特 | SUNMATE | |
MBR10H100CT | MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol 文件:83.24 Kbytes 页数:3 Pages | VAISH 威世 | VAISH | |
MBR10H100CT | 10.0AMP. Schottky Barrier Rectifiers Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif 文件:127.79 Kbytes 页数:2 Pages | LUGUANG 鲁光电子 | LUGUANG | |
MBR10H100CT | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo 文件:1.23717 Mbytes 页数:3 Pages | KERSEMI | KERSEMI |
产品属性
- 产品编号:
MBR10H100CT
- 制造商:
Taiwan Semiconductor Corporation
- 类别:
分立半导体产品 > 二极管 - 整流器 - 阵列
- 包装:
管件
- 二极管配置:
1 对共阴极
- 二极管类型:
肖特基
- 电流 - 平均整流 (Io)(每二极管):
10A
- 速度:
快速恢复 =< 500ns,> 200mA(Io)
- 工作温度 - 结:
-55°C ~ 175°C
- 安装类型:
通孔
- 封装/外壳:
TO-220-3
- 供应商器件封装:
TO-220AB
- 描述:
DIODE ARRAY SCHOTTKY 100V TO220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-220 |
6800 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
onsemi |
25+ |
TO-220 |
12421 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
询价 | |||
ON |
2015+ |
TO-2203 |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
LT |
16+ |
TO-220 |
8000 |
原装现货请来电咨询 |
询价 | ||
TSC |
17+ |
TO-220 |
6200 |
询价 | |||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
LT |
25+ |
TO-220 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
询价 | ||
VISHAY |
224 |
TO-220 |
127 |
特价销售欢迎来电!! |
询价 | ||
TSC台半 |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
询价 |
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