首页 >MBR10H100CT>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MBR10H100CT

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Outp

文件:68.44 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBR10H100CT

SWITCHMODE Power Rectifier 100 V, 10 A

Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total (5.0 A Per Diode Leg) • Guard−Ring for Stress Protection • Pb−Free Package is Available Applications • Power Supply − Ou

文件:133.12 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBR10H100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:530.38 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR10H100CT

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

文件:162 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR10H100CT

10.0 AMPS. Schottky Barrier Rectifiers

Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif

文件:1.30244 Mbytes 页数:2 Pages

TSC

台湾半导体

MBR10H100CT

Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:78.47 Kbytes 页数:3 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR10H100CT

SCHOTTKY BARRIER RECTIFIERS

Features  High efficiencty operation  Low power loss  High forward surge capability  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std..(Halogen Free)  Low stored charge majority carrier conduction

文件:515.179 Kbytes 页数:2 Pages

SUNMATE

森美特

MBR10H100CT

MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low vol

文件:83.24 Kbytes 页数:3 Pages

VAISH

威世

MBR10H100CT

10.0AMP. Schottky Barrier Rectifiers

Features ● Plastic material used carries Underwriters Laboratory Classifications 94V-0 ● Metal silicon junction, majority carrier conduction ● Low power loss, high efficiency ● High current capability, low forward voltage drop ● High surge capability ● For use in power supply – output rectif

文件:127.79 Kbytes 页数:2 Pages

LUGUANG

鲁光电子

MBR10H100CT

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Schottky Barrier Rectifiers Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvo

文件:1.23717 Mbytes 页数:3 Pages

KERSEMI

产品属性

  • 产品编号:

    MBR10H100CT

  • 制造商:

    Taiwan Semiconductor Corporation

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 阵列

  • 包装:

    管件

  • 二极管配置:

    1 对共阴极

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io)(每二极管):

    10A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 工作温度 - 结:

    -55°C ~ 175°C

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220AB

  • 描述:

    DIODE ARRAY SCHOTTKY 100V TO220

供应商型号品牌批号封装库存备注价格
ON
23+
TO-220
6800
只做原装正品假一赔十为客户做到零风险!!
询价
onsemi
25+
TO-220
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ON
24+
TO-2203LEADSTANDA
8866
询价
ON
2015+
TO-2203
12500
全新原装,现货库存长期供应
询价
LT
16+
TO-220
8000
原装现货请来电咨询
询价
TSC
17+
TO-220
6200
询价
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
LT
25+
TO-220
90000
一级代理商进口原装现货、假一罚十价格合理
询价
VISHAY
224
TO-220
127
特价销售欢迎来电!!
询价
TSC台半
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
询价
更多MBR10H100CT供应商 更新时间2026-1-17 11:23:00