首页 >MBR1090>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

MBR1090FCT

SCHOTTKY BARRIER RECTIFIER

FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Ap

文件:381.73 Kbytes 页数:3 Pages

JIANGSU

长电科技

MBR1090G

SWITCHMODE Power Rectifiers

SWITCHMODE™ Power Rectifiers This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction T

文件:58.09 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MBR1090G

SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 60 to 100 VOLTS

This series of SWITCHMODE power rectifiers uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 9

文件:415.35 Kbytes 页数:4 Pages

KERSEMI

MBR1090-M3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC

文件:111.79 Kbytes 页数:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1090-M3

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish

文件:110.87 Kbytes 页数:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1090-M3_V01

High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vish

文件:110.87 Kbytes 页数:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1090_09

High-Voltage Schottky Rectifier

文件:141.37 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1090_12

High-Voltage Schottky Rectifier

文件:116.69 Kbytes 页数:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1090_15

High-Voltage Schottky Rectifier

文件:149.67 Kbytes 页数:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

MBR1090-1

Switching power supply

文件:252.37 Kbytes 页数:6 Pages

SMC

桑德斯微电子

产品属性

  • 产品编号:

    MBR1090

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    SWITCHMODE™

  • 包装:

    卷带(TR)

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    10A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-2

  • 供应商器件封装:

    TO-220-2

  • 工作温度 - 结:

    -65°C ~ 175°C

  • 描述:

    DIODE SCHOTTKY 90V 10A TO220-2

供应商型号品牌批号封装库存备注价格
onsemi
25+
TO-220-2
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ON
24+
TO-2202LEADSTANDA
8866
询价
ON
2015+
TO-2202
12500
全新原装,现货库存长期供应
询价
M
05+
原厂原装
4352
只做全新原装真实现货供应
询价
Vishay
17+
TO-220
6200
询价
ON
23+
TO-220-2
11846
一级代理商现货批发,原装正品,假一罚十
询价
GS
23+
TO-220
10000
专做原装正品,假一罚百!
询价
ON
25+23+
TO-220
38255
绝对原装正品全新进口深圳现货
询价
MOTOROLA
18+
TO220
12500
全新原装正品,本司专业配单,大单小单都配
询价
ON
24+
TO-220
35200
一级代理分销/放心采购
询价
更多MBR1090供应商 更新时间2026-1-18 9:38:00