10A SCHOTTKY BARRIER RECTIFIER

文件：75.69 Kbytes 页数：3 Pages

DIODES

美台半导体

Schottky

Diodes

美台半导体

Package：TO-220-2；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 35V 10A TO220AC

DIODES

美台半导体

Package：TO-220-2；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 35V 10A TO220-2

ONSEMI

安森美半导体

Package：TO-220-2；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 35V 10A TO220AC

Vishay General Semiconductor - Diodes Division

SWITCHMODE™ Power Rectifiers

Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 10 A Total • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrumentation Mechanical Cha

文件：180.29 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Schottky Rectifiers

Features • Low Power Loss, High Efficiency • High Surge Capacity • Metal Silicon Junction, Majority Carrier Conduction • High Current Capacity, Low Forward-Voltage Drop • Guard Ring for Over-Voltage Protection (OVP) Applications • Low-Voltage • High-Frequency Inverters • Free Wheeling

文件：462.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

10A SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss, High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protect

文件：64.989 Kbytes 页数：2 Pages

DIODES

美台半导体

10 Am p Schott ky Barrier Rectifier 30-60 Volts

Features • Metal of Silicon Rectifier, Majority Carrier Conduction • Halogen Free Available Upon Request By Adding Suffix -HF • Low Power Loss High Efficiency • High Surge Capacity, High Current Capability • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix Designates Compliant. See Order

文件：647.92 Kbytes 页数：2 Pages

MCC

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rec

文件：197.32 Kbytes 页数：2 Pages

MOSPEC

统懋