Lower power losses, high efficiency

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo

文件：130.259 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode High Voltage Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance p

文件：129.34 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · High Surge Current Capability · Low Forward Voltage Drop · Low Leadkage Current APPLICATIONS · Switching Power Supply (SPS) · Freewheeling Diode · DC/DC Converter

文件：325.03 Kbytes 页数：2 Pages

ISC

无锡固电

High Voltage Trench MOS Barrier Schottky Rectifier

文件：691.41 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common Cathode High Voltage Schottky Rectifier

Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

Vishay

威世

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS    Fo

文件：138.8 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS    Fo

文件：138.8 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Voltage Trench MOS Barrier Schottky Rectifier

文件：691.41 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-220-3；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V TO220

Vishay General Semiconductor - Diodes Division

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V TO220

Vishay General Semiconductor - Diodes Division