| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Dual High-Voltage Schottky Rectifiers Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H 文件:78.47 Kbytes 页数:3 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo 文件:138.8 Kbytes 页数:4 Pages | VishayVishay Siliconix 威世威世科技公司 | Vishay | ||
SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A. • Repetitive Peak Reverse Voltage : VRRM=100V. • Fast Reverse Recovery Time : trr=35ns. 文件:441.84 Kbytes 页数:2 Pages | KEC KEC(Korea Electronics) | KEC | ||
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection 文件:73.17 Kbytes 页数:2 Pages | DIODES 美台半导体 | DIODES | ||
10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur 文件:99.53 Kbytes 页数:2 Pages | TSC 台湾半导体 | TSC | ||
SCHOTTKY RECTIFIERS VOLTAGE 20~200 Volts CURRENT 10 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capability • High frequency 文件:2.27794 Mbytes 页数:5 Pages | NIUHANG 纽航电子 | NIUHANG | ||
10AMp Schott ky Barrier Rectifier 80-100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability 文件:1.2522 Mbytes 页数:2 Pages | KERSEMI | KERSEMI | ||
SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u 文件:356.38 Kbytes 页数:3 Pages | HORNBY 南通康比电子 | HORNBY | ||
Dual Common Cathode High-Voltage Schottky Rectifier FEATURES • 150°C TJ operation • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Guard ring for enhanced ruggedness, long term reliability and overvoltage protection • Solder bath temperature 260°C maximum, 40s, per 文件:378.8 Kbytes 页数:5 Pages | NELLSEMI 尼尔半导体 | NELLSEMI | ||
10A Schottky Barrier Rectifiers FEATURES • Metal of silicon rectifier,majority carrier conducton • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 MECHANICAL DATA • Case :TO-220 mol 文件:590.1 Kbytes 页数:2 Pages | MORESEMI 摩矽半导体 | MORESEMI |
技术参数
- Compliance (Only Automotive supports PPAP):
Standard
- Configuration:
Dual
- MaximumAverageRectifiedCurrent IO (A):
10 A
- @ TerminalTemperature TT (ºC):
N/A ºC
- Peak RepetitiveReverse VoltageVRRM (V):
100 V
- Peak ForwardSurge CurrentIFSM (A):
100 A
- Forward Voltage Drop VF (V):
0.85 V
- @ IF (A):
5 A
- Maximum ReverseCurrent IR (µA):
100 µA
- @ VR (V):
100 V
- Packages:
ITO220AB Type BR (TO220F)/TO220-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VCHIP/NAMC |
23+ |
TO-220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
3000 |
公司现货 |
询价 | ||||
LTN |
05+ |
原厂原装 |
1149 |
只做全新原装真实现货供应 |
询价 | ||
MHCHXM |
23+ |
TO-220 |
5000 |
全新原装的现货特价 |
询价 | ||
MOT |
23+ |
TO-220 |
5500 |
现货,全新原装 |
询价 | ||
LT |
24+/25+ |
TO-220 |
8 |
原装正品现货库存价优 |
询价 | ||
AAT |
24+ |
TO-220 |
50000 |
原装现货假一罚十 |
询价 | ||
ON |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
LT |
16+ |
TO-220 |
8000 |
原装现货请来电咨询 |
询价 | ||
VISHAY |
25+ |
TO220-3 |
100 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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