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MBR10100CT

Dual High-Voltage Schottky Rectifiers

Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • H

文件:78.47 Kbytes 页数:3 Pages

VishayVishay Siliconix

威世威世科技公司

MBR10100CT

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS    Fo

文件:138.8 Kbytes 页数:4 Pages

VishayVishay Siliconix

威世威世科技公司

MBR10100CT

SCHOTTKY BARRIER TYPE DIODE

SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES • Average Output Rectified Current : IO=10A. • Repetitive Peak Reverse Voltage : VRRM=100V. • Fast Reverse Recovery Time : trr=35ns.

文件:441.84 Kbytes 页数:2 Pages

KEC

KEC(Korea Electronics)

MBR10100CT

10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection

文件:73.17 Kbytes 页数:2 Pages

DIODES

美台半导体

MBR10100CT

10.0 AMPS. Schottky Barrier Rectifiers

Voltage Range 30 to 200 Volts Current 10.0 Amperes Features ◇ Plastic material used carries Underwriters Laboratory Classifications 94V-0 ◇ Metal silicon junction, majority carrier conduction ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ High sur

文件:99.53 Kbytes 页数:2 Pages

TSC

台湾半导体

MBR10100CT

SCHOTTKY RECTIFIERS

VOLTAGE 20~200 Volts CURRENT 10 Ampers FEATURES • Power pack • Metal silicon junction ,majority carrier conduction • Guard ring for overvoltage protection • Low power loss ,high efficiency • High current capability ,low forward voltage drop • High forward surge capability • High frequency

文件:2.27794 Mbytes 页数:5 Pages

NIUHANG

纽航电子

MBR10100CT

10AMp Schott ky Barrier Rectifier 80-100 Volts

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件:1.2522 Mbytes 页数:2 Pages

KERSEMI

MBR10100CT

SCHOTTKY BARRIER RECTIFIER

REVERSE VOLTAGE: 35 to 200 VOLTS FORWARD CURRENT: 10.0 AMPERE FEATURES • Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 • Metal silicon junction, majority carrier conduction • Guard ring for overvoltage protection • Low power loss, high efficiency • For u

文件:356.38 Kbytes 页数:3 Pages

HORNBY

南通康比电子

MBR10100CT

Dual Common Cathode High-Voltage Schottky Rectifier

FEATURES • 150°C TJ operation • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Guard ring for enhanced ruggedness, long term reliability and overvoltage protection • Solder bath temperature 260°C maximum, 40s, per

文件:378.8 Kbytes 页数:5 Pages

NELLSEMI

尼尔半导体

MBR10100CT

10A Schottky Barrier Rectifiers

FEATURES • Metal of silicon rectifier,majority carrier conducton • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 MECHANICAL DATA • Case :TO-220 mol

文件:590.1 Kbytes 页数:2 Pages

MORESEMI

摩矽半导体

技术参数

  • Compliance (Only Automotive supports PPAP):

    Standard

  • Configuration:

    Dual

  • MaximumAverageRectifiedCurrent IO (A):

    10 A

  • @ TerminalTemperature TT (ºC):

    N/A ºC

  • Peak RepetitiveReverse VoltageVRRM (V):

    100 V

  • Peak ForwardSurge CurrentIFSM (A):

    100 A

  • Forward Voltage Drop VF (V):

    0.85 V

  • @ IF (A):

    5 A

  • Maximum ReverseCurrent IR (µA):

    100 µA

  • @ VR (V):

    100 V

  • Packages:

    ITO220AB Type BR (TO220F)/TO220-3

供应商型号品牌批号封装库存备注价格
VCHIP/NAMC
23+
TO-220
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
24+
3000
公司现货
询价
LTN
05+
原厂原装
1149
只做全新原装真实现货供应
询价
MHCHXM
23+
TO-220
5000
全新原装的现货特价
询价
MOT
23+
TO-220
5500
现货,全新原装
询价
LT
24+/25+
TO-220
8
原装正品现货库存价优
询价
AAT
24+
TO-220
50000
原装现货假一罚十
询价
ON
23+
TO-220
5000
原装正品,假一罚十
询价
LT
16+
TO-220
8000
原装现货请来电咨询
询价
VISHAY
25+
TO220-3
100
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多MBR10100C供应商 更新时间2025-12-12 15:35:00