型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
10AMp Schott ky Barrier Rectifier 80-100 Volts Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability 文件:1.2522 Mbytes 页数:2 Pages | KERSEMI | KERSEMI | ||
10A Schottky Barrier Rectifiers FEATURES • Metal of silicon rectifier,majority carrier conducton • Guard ring for transient protection • Low power loss, high efficiency • High current capability, low VF • High surge capacity • Plastic package has UL flammability classification 94V-0 MECHANICAL DATA • Case :TO-220 mol 文件:590.1 Kbytes 页数:2 Pages | MORESEMI 摩矽半导体 | MORESEMI | ||
Schottky Barrier Diode Schottky Barrier Diode 文件:86.16 Kbytes 页数:4 Pages | SIRECT 矽莱克半导体 | SIRECT | ||
SCHOTTKY BARRIER RECTIFIER FEATURES * 10 amps total (5 amps per diode leg) * Guard ring for transient protection * Low forward voltage drop * High surge capability * Low power loss/High efficiency 文件:31.37 Kbytes 页数:2 Pages | UTC 友顺 | UTC | ||
Lower power losses, high efficiency FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo 文件:130.259 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Dual Common Cathode High Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance p 文件:129.34 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo 文件:138.8 Kbytes 页数:4 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Fo 文件:138.8 Kbytes 页数:4 Pages | VishayVishay Siliconix 威世 | Vishay | ||
SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 40 to 200 V Forward Current - 10 A FEATURES • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed • Mounting position: any Mechanical data • Case: TO-220 • Approx. Weight: 文件:371.69 Kbytes 页数:3 Pages | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY | ||
SCHOTTKY RECTIFIER Features: • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • This 文件:151.03 Kbytes 页数:5 Pages | SMC 桑德斯微电子 | SMC |
技术参数
- VRRM(V):
1000
- IO(A):
10
- IFSM(A):
240
- VF(V):
1.10
- IR(uA):
10
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HYGROUP台产 |
24+ |
MBR-W |
50000 |
询价 | |||
ON |
05+ |
原厂原装 |
4246 |
只做全新原装真实现货供应 |
询价 | ||
DISCRETE |
50 |
ON |
11628 |
询价 | |||
ON |
2015+ |
TO-2202 |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
ON |
25+ |
TO-220 |
18000 |
原厂直接发货进口原装 |
询价 | ||
MOT |
23+ |
TO-220 |
5500 |
现货,全新原装 |
询价 | ||
AAT |
24+ |
TO-220 |
50000 |
原装现货假一罚十 |
询价 | ||
ON |
23+ |
TO220AC |
5000 |
原装正品,假一罚十 |
询价 | ||
LT |
16+ |
TO-220 |
8000 |
原装现货请来电咨询 |
询价 | ||
ON |
25+ |
TO220-2 |
470 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |
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