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EN29LV160B-90B

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90BP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90T

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TI

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TIP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

EN29LV160B-90TP

16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only

GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta

EON

Eon Silicon Solution Inc.

MBM29LV160B-90

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160B-90

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160B-90PBT

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160B-90PBT

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160B-90PCV

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160B-90PCV

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160B-90PFTN

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160B-90PFTN

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160B-90PFTR

FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT

■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan

spansionSPANSION

飞索飞索半导体

MBM29LV160B-90PFTY

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

MBM29LV160B-90PN

16M(2Mx쨈8/1Mx16)BIT

GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit

FujitsuFujitsū Kabushiki-gaisha

富士通富士通株式会社

供应商型号品牌批号封装库存备注价格
FUJ
00+
TSSOP48
328
询价
FUJ
23+
TSSOP/48
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
FUJITSU
2023+
TSOP48
3550
全新原厂原装产品、公司现货销售
询价
FUJITSU
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FUJITSU
1926+
TSOP
6852
只做原装正品现货!或订货假一赔十!
询价
FUJITSU
23+
TSOP48
4000
正品原装货价格低qq:2987726803
询价
MALAYSIA
22+
4897
绝对原装!现货热卖!
询价
FUJITSU/富士通
22+
TSSOP-48
9899
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
FUJITSU
09+
TSSOP
5500
原装无铅,优势热卖
询价
FUJ
2020+
BGA
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多MBM29LV160B-90PFTV供应商 更新时间2024-6-22 10:02:00