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EN29LV160B-90TIP	文件：420.29 Kbytes Page：45 Pages	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
EN29LV160B-90B	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
EN29LV160B-90BI	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
EN29LV160B-90BIP	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
EN29LV160B-90BP	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
EN29LV160B-90T	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
EN29LV160B-90TI	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
EN29LV160B-90TP	文件：420.29 Kbytes Page：45 Pages	16Megabit(2048Kx8-bit/1024Kx16-bit)FlashMemoryBootSectorFlashMemory,CMOS3.0Volt-only GENERALDESCRIPTION TheEN29LV160isa16-Megabit,electricallyerasable,read/writenon-volatileflashmemory,organizedas2,097,152bytesor1,048,576words.Anybytecanbeprogrammedtypicallyin8µs.TheEN29LV160features3.0Vvoltagereadandwriteoperation,withaccesstimesasfasta	EON Eon Silicon Solution Inc.	EON
MBM29LV160B-90	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体	spansion
MBM29LV160B-90	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社	Fujitsu
MBM29LV160B-90PBT	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社	Fujitsu
MBM29LV160B-90PBT	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体	spansion
MBM29LV160B-90PCV	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社	Fujitsu
MBM29LV160B-90PCV	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体	spansion
MBM29LV160B-90PFTN	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社	Fujitsu
MBM29LV160B-90PFTN	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体	spansion
MBM29LV160B-90PFTR	文件：731.38 Kbytes Page：58 Pages	FLASHMEMORYCMOS16M(2Mx8/1Mx16)BIT ■GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(1),48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwiththestan	spansionSPANSION 飞索飞索半导体	spansion
MBM29LV160B-90PFTY	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社	Fujitsu
MBM29LV160B-90PN	文件：767.76 Kbytes Page：60 Pages	16M(2Mx쨈8/1Mx16)BIT GENERALDESCRIPTION TheMBM29LV160T/Bisa16M-bit,3.0V-onlyFlashmemoryorganizedas2Mbytesof8bitseachor1Mwordsof16bitseach.TheMBM29LV160T/Bisofferedina48-pinTSOP(I),46-pinSON,48-pinCSOPand48-ballFBGApackages.Thedeviceisdesignedtobeprogrammedin-systemwit	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社	Fujitsu

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市永贝尔科技有限公司	EN29LV160B-90TIP	EON	23+	NA	39960	只做进口原装,终端工厂免费送样	询价
深圳市天成基业科技有限公司	EN29LV160BB-70	EON	20+/21+	TSOP-48	8200	原装现货,长期供应,	询价
深圳市博浩通科技有限公司	EN29LV160BB-70B1D	EON	23+	BGA	9980	价格优势、原装现货、客户至上。欢迎广大客户来电查询	询价
深圳市航润创能电子集团有限公司	EN29LV160BB-70B1D	EON	21+	BGA	1866	原装现货假一赔十	询价
深圳市安富世纪电子有限公司	EN29LV160BB-70B1D	EON	21+	BGA	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	EN29LV160BB-70B1D	EON	08+	BGA	1866	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市德创芯微科技有限公司	EN29LV160BB-70B1D	EON	08+	BGA	1866	全新原装,支持实单,假一罚十,德创芯微	询价
天津市博通航睿技术有限公司	EN29LV160BB-70B1D	EON	08+	BGA	1966	全新原装实单必成	询价
深圳市亿鸿丰电子科技有限公司	EN29LV160BB-70B1D	EON		BGA	6000	原装现货,长期供应,终端可账期	询价
深圳中芯器材有限公司	EN29LV160BB70BIP	eon	dc11	原厂封装	61	INSTOCK:480/tray/bga	询价

更多EN29LV160B-90TIP供应商更新时间2024-4-23 14:51:00

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