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型号	下载订购	功能描述	制造商上传企业	LOGO
MBM29LV160B-90PFTY	文件：767.76 Kbytes Page：60 Pages	16M (2M x쨈 8/1M x 16) BIT GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (I), 46-pin SON, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system wit 文件：767.76 Kbytes 页数：60 Pages	Fujitsu 富士通	Fujitsu
MBM29LV160B-90PN	文件：767.76 Kbytes Page：60 Pages	16M (2M x쨈 8/1M x 16) BIT GENERAL DESCRIPTION The MBM29LV160T/B is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160T/B is offered in a 48-pin TSOP (I), 46-pin SON, 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system wit 文件：767.76 Kbytes 页数：60 Pages	Fujitsu 富士通	Fujitsu
EN29LV160B-90B	文件：420.29 Kbytes Page：45 Pages	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a 文件：420.29 Kbytes 页数：45 Pages	EON 宜扬科技	EON
EN29LV160B-90BI	文件：420.29 Kbytes Page：45 Pages	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a 文件：420.29 Kbytes 页数：45 Pages	EON 宜扬科技	EON
EN29LV160B-90BIP	文件：420.29 Kbytes Page：45 Pages	16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a 文件：420.29 Kbytes 页数：45 Pages	EON 宜扬科技	EON

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市旺财半导体有限公司	MBM29LV160BB-70PFTN	FUJITSU	23+	TSOP48	4000	正品原装货价格低	询价
深圳市一线半导体有限公司	MBM29LV160BE	FUJ	24+	TSSOP-48	300		询价
贸泽芯城（深圳）电子科技有限公司	MBM29LV160BE	FUJITSU/富士通	23+	TSSOP-48	9899	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
深圳市勤思达科技有限公司	MBM29LV160BE-7	FUJITSU	09+	TSSOP	5500	原装无铅,优势热卖	询价
深圳市佳鑫美电子科技有限公司	MBM29LV160BE-7	FUJISU	25+	TSSOP	2568	原装优势!绝对公司现货	询价
深圳市威尔健半导体有限公司	MBM29LV160BE-70	FUJITSU/富士通	23+	BGA	50000	全新原装正品现货,支持订货	询价
深圳市得捷芯城科技有限公司	MBM29LV160BE-70	FUJITSU/富士通	24+	NA/	4620	原装现货,当天可交货,原型号开票	询价
深圳市安富世纪电子有限公司	MBM29LV160BE-70	FUJ	23+	BGA	1370	全新原装正品现货,支持订货	询价
瀚佳科技(深圳)有限公司	MBM29LV160BE-70	只做原装	24+	BGA	36520	一级代理/放心采购	询价
深圳市科恒伟业电子有限公司	MBM29LV160BE-70	FUJITSU/富士通	2450+	BGA	9850	只做原厂原装正品现货或订货假一赔十!	询价

更多MBM29LV160B-90PFTY供应商更新时间2025-12-3 10:31:00

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