1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

文件：2.43939 Mbytes 页数：33 Pages

RAMXEED

富士通

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

文件：2.43939 Mbytes 页数：33 Pages

RAMXEED

富士通

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

文件：2.43939 Mbytes 页数：33 Pages

RAMXEED

富士通

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

文件：2.43939 Mbytes 页数：33 Pages

RAMXEED

富士通

1M (128 K x 8) Bit I2C

 DESCRIPTION The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC1MT is able to retain data

文件：2.43939 Mbytes 页数：33 Pages

RAMXEED

富士通

FeRAM (I2C接口)

Fujitsu

富士通

Package：8-SOIC（0.154"，3.90mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FRAM 1MBIT I2C 3.4MHZ 8SOP

Kaga FEI America, Inc.