MB85RC1MTPNF-G-JNERE1集成电路（IC）的存储器规格书PDF中文资料

厂商型号	MB85RC1MTPNF-G-JNERE1
参数属性	MB85RC1MTPNF-G-JNERE1 封装/外壳为8-SOIC（0.154"，3.90mm 宽）；包装为托盘；类别为集成电路（IC）的存储器；产品描述：IC FRAM 1MBIT I2C 3.4MHZ 8SOP
功能描述	1M (128 K x 8) Bit I2C
封装外壳	8-SOIC（0.154"，3.90mm 宽）
文件大小	2.43939 Mbytes
页面数量	33 页
生产厂商	RAMXEED
中文名称	富士通
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-3 15:11:00
人工找货	MB85RC1MTPNF-G-JNERE1价格和库存，欢迎联系客服免费人工找货

 DESCRIPTION

The MB85RC1MT is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072

words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

nonvolatile memory cells.

Unlike SRAM, the MB85RC1MT is able to retain data without using a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC1MT has improved to be at

least 1013 cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC1MT does not need a polling sequence after writing to the memory such as the case of Flash

memory or E2PROM.

 FEATURES

• Bit configuration : 131,072 words  8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).

• Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE)

1 MHz (Max @FAST MODE PLUS)

• Read/write endurance : 1013 times / byte

• Data retention : 10 years (  85 C), 95 years (  55 C), over 200 years (  35 C)

• Operating power supply voltage: 1.8 V to 3.6 V

• Low-power consumption : Operating power supply current 0.71 mA (Typ @3.4 MHz)

1.2 mA (Max @3.4 MHz)

Standby current 15 A (Typ)

Sleep current 4 A (Typ)

• Operation ambient temperature range

:  40 C to  85 C

• Package : 8-pin plastic SOP 150mil

RoHS compliant