8 M (512 K × 16) Bit

DESCRIPTIONS The MB85R8M2TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M2TA is able to retain data without using a back-up bat

文件：1.39008 Mbytes 页数：30 Pages

RAMXEED

富士通

8 M (512 K × 16) Bit

DESCRIPTIONS The MB85R8M2TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M2TA is able to retain data without using a back-up bat

文件：1.39008 Mbytes 页数：30 Pages

RAMXEED

富士通

8 M (512 K × 16) Bit

DESCRIPTIONS The MB85R8M2TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R8M2TA is able to retain data without using a back-up bat

文件：1.39008 Mbytes 页数：30 Pages

RAMXEED

富士通

FeRAM (并行接口)

Fujitsu

富士通

包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC FRAM

Kaga FEI America, Inc.

Package：48-VFBGA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：8MBIT FRAM (512K X16) PARALLEL I

Kaga FEI America, Inc.

Package：44-TSOP（0.400"，10.16mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 存储器 描述：8MBIT FRAM (512K X16) PARALLEL I

Kaga FEI America, Inc.