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3632

VDSLModule

BournsBourns Inc.

伯恩斯(邦士)

AW3632

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

AW3632DNR

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

BA3632K

Pre/poweramplifierfor1.5Vheadphonestereos

TheBA3632Kisadual-channelpre/powersystemICdesignedfor1.5Vheadphonestereos.ThereisnoneedforDC/DCconversion,andthesystemcanoperateoffasinglebattery.TheICdrawslowcurrent(ICC=2.6mA)toallowlongsetlife. Features 1)Dualpre-amplifierswithautoreversecompat

ROHMRohm Semiconductor

罗姆罗姆半导体集团

C3632

1700WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •6Ux42TEx226mm •Weight:10kg

POWERBOX

Powerbox manufactures

DS3632

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DS3632

CMOSDualPeripheralDrivers

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

DS3632N

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

E3632A

ProgrammableDCPowerSupplies

KEYSIGHTKeysight Technologies

德科技(中国德科技(中国)有限公司

E3632S

2C12SOLIDBCFLEXOASFLEXFireAlarm/LifeSafetyCable

GENERALGeneral Electric

通用电气公司美国通用电气公司

FDB3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FDB3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDI3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    MAX3632ETG+T

  • 制造商:

    Maxim Integrated Products

  • 功能描述:

    622MBPS/1244MBPS BURST-MODE LIMITING AMPLIFIER FOR GPON OLT - Tape and Reel

供应商型号品牌批号封装库存备注价格
MAXIM
2017+
QFN
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
MAXIM
19+
QFN24
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
MAXIM
23+
QFN
8650
受权代理!全新原装现货特价热卖!
询价
23+
N/A
36200
正品授权货源可靠
询价
MAXIM
2020+
QFN
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
Maxim Integrated
21+
24-TQFN(4x4)
65200
一级代理/放心采购
询价
Maxim
1931+
N/A
567
加我qq或微信,了解更多详细信息,体验一站式购物
询价
MAXIM/美信
21+
QFN
50000
终端可免费提供样品,欢迎咨询
询价
MAXIM
20+
QFN-24
1001
就找我吧!--邀您体验愉快问购元件!
询价
MAXIM/美信
QFN24
265209
假一罚十原包原标签常备现货!
询价
更多MAX3632ETG+T供应商 更新时间2024-5-14 9:35:00