首页 >DS3632N>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

DS3632N

CMOS Dual Peripheral Drivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

3632

VDSLModule

BournsBourns Inc.

伯恩斯(邦士)

AW3632

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

AW3632DNR

Highefficiency,lowprofile,fixed5Voutputpumppowersupply

AWINICAWINIC

艾为

BA3632K

Pre/poweramplifierfor1.5Vheadphonestereos

TheBA3632Kisadual-channelpre/powersystemICdesignedfor1.5Vheadphonestereos.ThereisnoneedforDC/DCconversion,andthesystemcanoperateoffasinglebattery.TheICdrawslowcurrent(ICC=2.6mA)toallowlongsetlife. Features 1)Dualpre-amplifierswithautoreversecompat

ROHMRohm Semiconductor

罗姆罗姆半导体集团

C3632

1700WATTS(AC)DC/DCSINGLEOUTPUT

Features •SingleOutput •6Ux42TEx226mm •Weight:10kg

POWERBOX

Powerbox manufactures

DS3632

CMOSDualPeripheralDrivers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DS3632

CMOSDualPeripheralDrivers

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

E3632A

ProgrammableDCPowerSupplies

KEYSIGHTKeysight Technologies

德科技(中国德科技(中国)有限公司

E3632S

2C12SOLIDBCFLEXOASFLEXFireAlarm/LifeSafetyCable

GENERALGeneral Electric

通用电气公司美国通用电气公司

FDB3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features ●rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A ●Qg(tot)=84nC(Typ.),VGS=10V ●LowMillerCharge ●LowQRRBodyDiode ●UISCapability(SinglePulseandRepetitivePulse)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FDB3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDB3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDH3632

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDI3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

N-ChannelPowerTrenchMOSFET100V,80A,9m?

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDI3632

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP3632

N-ChannelPowerTrenchMOSFET

Features •rDS(ON)=7.5mΩ(Typ.),VGS=10V,ID=80A •Qg(tot)=84nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •DC/DCconvertersandOff-LineUPS •Distribute

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    DS3632N

  • 制造商:

    NSC

  • 制造商全称:

    National Semiconductor

  • 功能描述:

    CMOS Dual Peripheral Drivers

供应商型号品牌批号封装库存备注价格
NS
22+
DIP
8000
只做原装正品现货
询价
NS
87+
DIP
2500
全新原装现货绝对自己公司特价库
询价
NS
23+
SOP-8
18000
询价
NS
13+
DIP
3287
特价热销现货库存100%原装正品欢迎来电订购!
询价
NSC
22+
DIP-8
2200
绝对原装!真实库存!
询价
NS
04+
DIP
560
询价
NSC
2017+
DIP-8
65895
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NSC
23+
DIP8
9960
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
NS
23+
DIP
7800
全新原装正品,现货销售
询价
原厂正品
23+
DIP
5000
原装正品,假一罚十
询价
更多DS3632N供应商 更新时间2024-4-28 16:52:00