MASW-001100-1190数据手册RF/IF射频/中频RFID的射频开关规格书PDF

描述 Description

The MASW-001100-1190, MASW-002100-1191 and MASW-003100-1192 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as 2W, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beamlead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using MACOM’s patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20, AuSn solder or conductive Ag epoxy.

特性 Features

·Broad Bandwidth
·Glass Encapsulated Construction
·Fully Monolithic
·Rugged
·Lower Insertion Loss / Higher Isolation than pHempt
·Usable from 50MHz to 26.5GHz
·Specified from 50MHz to 20GHz
·RoHS Compliant
·Up to +33dBm C.W. Power Handling

应用 Application

·Aerospace and Defense
·ISM