SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

文件：115.68 Kbytes 页数：5 Pages

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Med. Barrier Si Single-Pocket Tape

The MA4E2502 SURMOUNT™ Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic ·Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HMIC™ Con;

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Package：模具；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 射频 描述：SCH SURMOUNT IN POCKET TAPE

MACOM Technology Solutions

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

文件：115.68 Kbytes 页数：5 Pages

MA-COM

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

文件：115.68 Kbytes 页数：5 Pages

MA-COM