SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

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Low Barrier Si Single-Pocket Tape

The MA4E2502 SURMOUNT™ Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, whic ·Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • • ••\n·RoHS Compliant\n·Lower Susceptibility to ESD Damage\n·Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)\n·Rugged HM;

MACOM

Package：模具；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 射频 描述：LOW BAR POCKET TAPE SURMOUNT CHI

MACOM Technology Solutions

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes

Description and Applications The MA4E2502 SURMOUNTTM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conducto

文件：115.68 Kbytes 页数：5 Pages

MA-COM