PIN Diodes for Microwave Switch Designs

Introduction This Application Note is intended to provide practical guidance in the selection of PIN Diodes for switch control circuit functions. Switches, Digital and Analog Attenuators, and Limiters each have unique functions that require proper device selection. The design difficulty lies with

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MA-COM

AlGaAs Beam Lead PIN Diode

Description M/A-COMs MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitax

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MACOM

AlGaAs Beamlead PIN Diode

Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabri

文件：90.46 Kbytes 页数：4 Pages

MA-COM

AlGaAs Beamlead PIN Diode

Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabri

文件：96.08 Kbytes 页数：4 Pages

MA-COM

AlGaAs Beamlead PIN Diode

Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabri

文件：96.08 Kbytes 页数：4 Pages

MA-COM

PIN Diodes for Microwave Switch Designs

MACOM

AlGaA PIN Diode

MACOM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process ·Low Series Resistance\n·RoHS Compliant\n·Polyimide Scratch Protection\n·Silicon Nitride Passivation\n·Can be Driven by a Buffered +5V TTL\n·5 Nanosecond Switching Speed\n·Low Capacitance;

MACOM

包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE PIN 50V

MACOM Technology Solutions