AlGaAs Beamlead PIN Diode

Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabri

文件：90.46 Kbytes 页数：4 Pages

MA-COM

AlGaAs Beamlead PIN Diode

Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabri

文件：96.08 Kbytes 页数：4 Pages

MA-COM

AlGaAs Beam Lead PIN Diode

Description M/A-COMs MA4AGBLP912 is an Aluminum-Gallium-Arsenide Anode Enhanced, Beam Lead PIN Diode. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction technology, produce less diode “On” resistance than conventional GaAs devices. These devices are fabricated on a OMCVD epitax

文件：87.63 Kbytes 页数：5 Pages

MACOM

AlGaA PIN Diode

MACOM's MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patented hetero-junction technology, produce less diode “On” resistance than conventional GaAs or silicon devices. This device is fabricated in a OMCVD system using a process ·Low Series Resistance\n·RoHS Compliant\n·Polyimide Scratch Protection\n·Silicon Nitride Passivation\n·Can be Driven by a Buffered +5V TTL\n·5 Nanosecond Switching Speed\n·Low Capacitance;

MACOM

包装：托盘 类别：分立半导体产品 二极管 - 射频 描述：RF DIODE PIN 50V

MACOM Technology Solutions

AlGaAs Beamlead PIN Diode

Description M/A-COM Technology Solutions MA4AGBLP912 is an Aluminum-Gallium-Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize M/A-COM Tech’s patent pending hetero-junction technology, produce less diode “On” resistance than a conventional GaAs device. This device is fabri

文件：96.08 Kbytes 页数：4 Pages

MA-COM