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M5M5256CVP-55XL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM???

文件:454.1 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M5256CVP-70LL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM???

文件:454.1 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M5256CVP-70XL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM???

文件:454.1 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M5256DFP

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

文件:160.95 Kbytes 页数:8 Pages

RENESAS

瑞萨

M5M5256DFP

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is f abricated using high-perf ormance 3 poly silicon CMOS technology . The use of resistiv e load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by cur

文件:165.4 Kbytes 页数:8 Pages

RENESAS

瑞萨

M5M5256DFP-10VLL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件:63.02 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M5256DFP-10VLL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件:44.18 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M5256DFP-10VXL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件:63.02 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M5256DFP-10VXL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件:44.18 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

M5M5256DFP-12VLL

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by curre

文件:63.02 Kbytes 页数:7 Pages

MITSUBISHI

三菱电机

技术参数

  • Organization (Kword):

    512

  • Organization(bit):

    x 36

  • Package Type:

    TQFP(100)

  • I/O voltage (VDDQ):

    3.3/2.5

  • Supply voltage (V):

    2.375 to 2.625/3.135 to 3.465

  • Operating temperature (°C):

    0 to 70

  • Production Status:

    EOL

  • Clock frequency (Hz):

    167

供应商型号品牌批号封装库存备注价格
MIT
24+
(SOP)
2650
原装现货假一罚十
询价
RENESAS/瑞萨
2022+
150
全新原装 货期两周
询价
MITSUBISHI
2018+
SOP/DIPQFP
140
原装假一赔十
询价
RENESAS
24+
TSOP
5000
全现原装公司现货
询价
MIT
25+
SOP28
9
就找我吧!--邀您体验愉快问购元件!
询价
MITSUBISH
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
询价
RENESAS/瑞萨
2223+
TSSOP32
26800
只做原装正品假一赔十为客户做到零风险
询价
RENESAS/瑞萨
22+
TSOP
12245
现货,原厂原装假一罚十!
询价
MITSUBISHI
25+
QFP
1000
强调现货,随时查询!
询价
MITSUBISHI
20+
DIP28
11520
特价全新原装公司现货
询价
更多M5M5供应商 更新时间2026-1-31 13:30:00