M59DR008FN数据手册原装现货意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M59DR008FN	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008FZB	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008E	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M59DR008EN	文件：267.87 Kbytes Page：37 Pages	8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory DESCRIPTION The M59DR008 is an 8 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：267.87 Kbytes 页数：37 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M59DR008T	ST	24+	BGA	5220		询价
深圳市卓越微芯电子有限公司	M59DR016C	ST	25+	BGA	4500	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市佳鑫美电子科技有限公司	M59DR016C	ST	25+	BGA48	3629	原装优势!房间现货!欢迎来电!	询价
深圳市锐视安科技有限公司	M59DR016C	ST	0126/0125	BGA48	18425	特价销售欢迎来电!!	询价
华富测量(深圳)传感技术有限公司	M59DR016C	ST	2138+	BGA	8960	专营BGA,QFP原装现货,假一赔十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M59DR016C	ST	26+	BGA	890000	一级总代理商原厂原装大批量现货一站式服务	询价
贸泽芯城（深圳）电子科技有限公司	M59DR016C120ZA6	-	23+	NA	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市恒达亿科技有限公司	M59DR016C-120ZA6	ST	25+	BGA	3200	全新原装、诚信经营、公司现货销售!	询价
深圳市威雅利发展有限公司	M59DR016C-120ZA6	ST	0244+	BGA48	1000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市晨豪科技有限公司	M59DR016C-120ZA6	ST/意法	23+	BGA	89630	当天发货全新原装现货	询价

更多M59DR008FN供应商更新时间2026-1-28 15:30:00

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