首页 >M59DR016C100ZB6T>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
M59DR016C100ZB6T | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory DESCRIPTION The M59DR016 is a 16 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.2V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally 文件：240.77 Kbytes 页数：37 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
MIT 上传：深圳市景鹏达电子有限公司 | MIT | |||
TSOP32 | RENESAS | |||
TSOP32 | RENESAS |
详细参数
- 型号：
M59DR016C100ZB6T
- 制造商：
STMICROELECTRONICS
- 制造商全称：
STMicroelectronics
- 功能描述：
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
- |
23+ |
NA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ST |
25+ |
BGA |
3200 |
全新原装、诚信经营、公司现货销售! |
询价 | ||
ST |
0244+ |
BGA48 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST/意法 |
23+ |
BGA |
89630 |
当天发货全新原装现货 |
询价 | ||
ST/意法 |
02+ |
BGA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST/意法 |
23+ |
BGA |
6000 |
专业配单保证原装正品假一罚十 |
询价 | ||
ST/意法 |
2450+ |
BGA |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
ST |
22+ |
BGA48 |
20000 |
公司只做原装 品质保证 |
询价 | ||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
询价 |
更多M59DR016C100ZB6T供应商
更新时间2025-12-19 11:10:00
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