32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：352.16 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：352.16 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：352.16 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：352.16 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：352.16 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：352.16 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体

32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

DESCRIPTION The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally

文件：352.16 Kbytes 页数：49 Pages

STMICROELECTRONICS

意法半导体