4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

文件：536.24 Kbytes 页数：35 Pages

STMICROELECTRONICS

意法半导体

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

文件：886.61 Kbytes 页数：46 Pages

NUMONYX

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

文件：536.24 Kbytes 页数：35 Pages

STMICROELECTRONICS

意法半导体

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description The M45PE40 is a 4 Mbit (512 K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Pag

文件：886.61 Kbytes 页数：46 Pages

NUMONYX

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARY DESCRIPTION The M45PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrate

文件：536.24 Kbytes 页数：35 Pages

STMICROELECTRONICS

意法半导体

Serial NOR Flash

Micron

美光

Package：8-SOIC（0.209"，5.30mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC FLASH 4MBIT SPI 75MHZ 8SO

Micron Technology Inc.