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M45PE40-VMW6TG

4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 33 MHz SPI Bus Interface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMW6TG

4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

M45PE40-VMW6TG TR

包装:托盘 封装/外壳:8-SOIC(0.209",5.30mm 宽) 类别:集成电路(IC) 存储器 描述:IC FLASH 4MBIT SPI 75MHZ 8SO

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

M45PE40-VMW6

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMW6G

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMW6G

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

M45PE40-VMW6P

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMW6P

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

M45PE40-VMW6T

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

M45PE40-VMW6TP

4Mbit,lowvoltage,Page-ErasableSerialFlashmemorywithbyte-alterabilityanda50MHzSPIbusinterface

Description TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus.Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegratedPag

NUMONYXNUMONYX

恒忆

M45PE40-VMW6TP

4Mbit,LowVoltage,Page-ErasableSerialFlashMemoryWithByte-Alterabilityanda33MHzSPIBusInterface

SUMMARYDESCRIPTION TheM45PE40isa4Mbit(512Kx8bit)SerialPagedFlashMemoryaccessedbyahighspeedSPI-compatiblebus. Thememorycanbewrittenorprogrammed1to256bytesatatime,usingthePageWriteorPagePrograminstruction.ThePageWriteinstructionconsistsofanintegrate

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    M45PE40-VMW6TG

  • 功能描述:

    闪存 4 Mbit low voltage Serial 闪存

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 数据总线宽度:

    1 bit

  • 存储类型:

    Flash

  • 存储容量:

    2 MB

  • 结构:

    256 K x 8

  • 接口类型:

    SPI

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.3 V

  • 最大工作电流:

    15 mA

  • 工作温度:

    - 40 C to + 85 C

  • 安装风格:

    SMD/SMT

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
MICRON/美光
22+
SO8W
8000
原厂原装,实单加微信
询价
micron(镁光)
23+
SOP
48902
正规渠道,大量现货,只等你来。
询价
ST
2022
SOP8
14
原厂原装正品,价格超越代理
询价
MICRON
17+
SOP-8W
5000
MICRON专营原装进口现货
询价
ST
17+
SOP8
9700
绝对原装正品现货假一罚十
询价
Micron
22+
SO8W
36000
代理渠道力挺长期原装现货 可开增票
询价
ST
2021+
23+
16500
代理授权直销,原装现货,假一罚十,长期稳定供应,特
询价
Micron
21+
SO8W
10000
专营原装正品现货,当天发货,可开发票!
询价
MICRON
21+
SOP8
530
全新原装,假一赔十!
询价
MICRON/美光
21+
SOP8
6000
全新原装 公司现货 价格优
询价
更多M45PE40-VMW6TG供应商 更新时间2024-4-29 8:01:00