丝印：M3；Package：DO-214AC；Surface Mount General Purpose Rectifier M1G Through M7G

Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.3526 Mbytes 页数：3 Pages

RFE

RFE international

丝印：M3；Package：SMAF；Surface Mount General Purpose Silicon Rectifiers

文件：472.54 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：MDDM3；Package：DO-214AC；SURFACE MOUNT GENERAL RECTIFIER

文件：580.69 Kbytes 页数：3 Pages

CHENDA

辰达半导体

丝印：M3；Package：DO-214AC；Surface Mount General Purpose Silicon Rectifiers

Features For surface mounted applications Low profile package Glass passivated chip junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives

文件：2.22862 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：M3；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NOR Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operation voltage range: VCC = 0.9 to 3.6 V

文件：181.54 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M3；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NOR Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V

文件：181.03 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M3；Package：TSSOP6；High-speed dual switching diode

1. General description High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 10

文件：212.53 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M3；Package：TSSOP6；High-speed dual switching diode

1. General description High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 10

文件：204.3 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M3；Package：SOD323；Voltage regulator diodes

1. General description Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. The diodes are available in the normalized E24 ±1 (BZX384-A), ±2 (BZX384-B) and approximately ±5 (BZX384-C) tolerance range. The series includes 37 breakdown vol

文件：320.93 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M3；Package：SOD-323；Voltage regulator diodes

DESCRIPTION Low-power voltage regulator diodes encapsulated in a very small SOD323 (SC-76) plastic SMD package. The diodes are available in the normalized E24 ±2 (BZX384-B) and approx. ±5 (BZX384-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.

文件：690.77 Kbytes 页数：11 Pages

恩XP