丝印：M3；Package：TSSOP6；High-speed dual switching diode

1. General description High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 10

文件：204.3 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

High-speed dual switching diode

1. General description High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 10

文件：204.3 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

High-speed dual switching diode

High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. • High switching speed: trr ≤ 4 ns\n• Low capacitance\n• Low leakage current\n• Reverse voltage: VR ≤ 100 V\n• Repetitive peak reverse voltage: VRRM ≤ 100 V\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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