BAS16DY-Q

Marking：M3；Package：TSSOP6；High-speed dual switching diode

1.Generaldescription High-speedswitching,electricallyisolateddualdiode,encapsulatedinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤10

BAS16DY-Q

High-speed dual switching diode; • High switching speed: trr ≤ 4 ns\n• Low capacitance\n• Low leakage current\n• Reverse voltage: VR ≤ 100 V\n• Repetitive peak reverse voltage: VRRM ≤ 100 V\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

High-speed switching, electrically isolated dual diode, encapsulated in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package.\n

BAS16DY-QX

High-speed dual switching diode

1.Generaldescription High-speedswitching,electricallyisolateddualdiode,encapsulatedinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤10