M29F002资料datasheet下载供应商报价第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
M29F002B-120P6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XK1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XK6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XN1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XN6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XP1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-120XP6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70K1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70K6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
M29F002B-70N1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION The M29F002 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single5VVCCsupply.For Programand Erase operations the necessary high voltages are generated internally. The device can also b 文件：196.28 Kbytes 页数：29 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

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技术参数

存储器格式：
闪存
技术：
FLASH - NOR
存储容量：
2Mb （256K x 8）
写周期时间 - 字，页：
70ns
访问时间：
70ns
存储器接口：
并联
电压 - 电源：
4.5V ~ 5.5V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装
封装/外壳：
32-LCC（J 形引线）
供应商器件封装：
32-PLCC（11.35x13.89）

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	M29F002	ST	24+	粒	10000	自己现货	询价
深圳市星佑电子有限公司	M29F002	ST	05+	原厂原装	4501	只做全新原装真实现货供应	询价
贸泽芯城（深圳）电子科技有限公司	M29F002	ST/意法	23+	PLCC	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛特兴科技有限公司	M29F002	ST	23+	PLCC32	16900	正规渠道,只有原装!	询价
深圳市晨豪科技有限公司	M29F002	ST/意法	23+	PLCC	89630	当天发货全新原装现货	询价
深圳市澳亿芯电子科技有限公司	M29F002	ST	24+	PLCC	12000	原装正品有挂就有货	询价
深圳市腾亿芯科技有限公司	M29F002	ST	25+	PLCC32	16900	原装，请咨询	询价
深圳市福安瓯科技有限公司	M29F002BT-45K1	STM	25+	PLCC32	1500	原装现货热卖中,提供一站式真芯服务	询价
深圳市富诚威科技有限公司	M29F002BT45K1MP	ST	25+	PLCC	2560	绝对原装!现货热卖!	询价
谛辉(北京/上海/青岛 )电子科技有限公司	M29F002BT-120K1	ST	25+	PLCC	18000	原厂直接发货进口原装	询价

更多M29F002供应商更新时间2025-10-12 16:01:00

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