M29F002资料datasheet下载供应商报价AMD-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
M29F002	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002	文件：436.41 Kbytes Page：37 Pages	2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory GENERALDESCRIPTION TheAm29F002Familyconsistsof2Mbit,5.0volt-onlyFlashmemorydevicesorganizedas262,144bytes.TheAm29F002offerstheRESET#function,theAm29F002Ndoesnot.ThedataappearsonDQ7–DQ0.Thedeviceisofferedin32-pinPLCC,32-pinTSOP,and32-pinPDIPpackages.Th	AMDAdvanced Micro Devices, Inc. 超威半导体美国超威半导体公司
M29F002	文件：461.15 Kbytes Page：46 Pages	2M (256K X 8) BIT ■GENERALDESCRIPTION TheMBM29F002TC/BCisa2M-bit,5.0V-OnlyFlashmemoryorganizedas256Kbytesof8bitseach.TheMBM29F002TC/BCisofferedina32-pinTSOP(I)and32-pinPLCCpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5.0VVCCsupply.A12.0	FujitsuFujitsū Kabushiki-gaisha 富士通富士通株式会社
M29F002B	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120K1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120K6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120N1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120N6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120P1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120P6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120XK1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120XK6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120XN1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120XN6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120XP1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-120XP6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-70K1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-70K6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-70N1TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
M29F002B-70N6TR	文件：196.28 Kbytes Page：29 Pages	2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory DESCRIPTION TheM29F002isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-Bytebasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thedevicecanalsob	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团

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详细参数

型号：
M29F002
制造商：
MCNIX
制造商全称：
Macronix International
功能描述：
2M-BIT [256K x 8] CMOS FLASH MEMORY

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	M29F002	ST	散新	粒	10000	自己现货	询价
深圳市星佑电子有限公司	M29F002	ST	05+	原厂原装	4501	只做全新原装真实现货供应	询价
深圳市永贝尔科技有限公司	M29F002	FUJITSU	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
中科航电(深圳)半导体技术有限公司	M29F002	ST		原包装	3560	原装正品!假一罚十!现货库存热卖	询价
贸泽芯城（深圳）电子科技有限公司	M29F002	ST/意法		PLCC	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛特兴科技有限公司	M29F002	ST	22+	PLCC32	16900	正规渠道,只有原装!	询价
京海半导体(深圳)有限公司	M29F002	ST	22+	PLCC	200	只做原装，支持实单，来电咨询。	询价
中科航电（深圳）电子集团有限公司	M29F002	ST		PLCC32	36900	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价
深圳市诺美思科技有限公司	M29F002	ST/意法	22+/23+	PLCC	9800	原装进口公司现货假一赔百	询价
深圳市晨豪科技有限公司	M29F002	ST/意法	23+	PLCC	89630	当天发货全新原装现货	询价

更多M29F002供应商更新时间2024-4-27 16:00:00

详细参数

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