1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

文件：1.23015 Mbytes 页数：64 Pages

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description\nThe M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus.\nThe memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program inst ■ 1 or 2 Mbit of page-erasable Flash memory\n■ 2.7 V to 3.6 V single supply voltage\n■ SPI bus compatible serial interface\n■ 75 MHz clock rate (maximum)\n■ Page size: 256 bytes\n– Page Write in 11 ms (typical)\n– Page Program in 0.8 ms (typical)\n– Page Erase in 10 ms (typical)\n■ SubSector Erase (;

Micron

美光

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

文件：1.23015 Mbytes 页数：64 Pages

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

文件：1.23015 Mbytes 页数：64 Pages

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

文件：1.23015 Mbytes 页数：64 Pages

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

文件：480.74 Kbytes 页数：37 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

文件：1.23015 Mbytes 页数：64 Pages

NUMONYX

1 and 2 Mbit, Low Voltage, Page-Erasable Serial Flash Memories with Byte-Alterability, 33 MHz SPI Bus, Standard Pin-out

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) Serial Paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Progra

文件：480.74 Kbytes 页数：37 Pages

STMICROELECTRONICS

意法半导体

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

文件：1.23015 Mbytes 页数：64 Pages

NUMONYX

1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout

Description The M25PE20 and M25PE10 are 2 Mbit (256 Kb × 8 bit) and 1 Mbit (128 Kb × 8 bit) serial paged Flash memories, respectively. They are accessed by a high speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Progra

文件：1.23015 Mbytes 页数：64 Pages

NUMONYX