M1F80

General Purpose Rectifiers(800V 1A)

RectifierDiode Feature •SmallSMD •High-Reliability

M1F80M12W2-1LA

丝印：M1F80M12W2-1LA；Package：ACEPACK-DMT-32；Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC

Features •AQG324qualified •1200Vblockingvoltage •78mΩoftypicalRDS(on) •MaximumoperatingjunctiontemperatureTJ=175°C •DBCCu-AlN-Cubasedsubstratetoimprovethermalperformance •Isolationvoltage3kV •IntegratedNTCtemperaturesensor Applications •Onboardchar

M1F80M12W2-1LA

Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V, 78 mOhm typ. SiC Power MOSFET with NTC; • AQG 324 qualified \n• 1200 V blocking voltage \n• 78 mΩ of typical RDS(on) \n• Maximum operating junction temperature TJ = 175 °C \n• DBC Cu-AlN-Cu based substrate to improve thermal performance \n• Isolation voltage 3 kV \n• Integrated NTC temperature sensor;

This ACEPACK DMT-32 power module realizes a fourpack topology with integrated NTC, tailored for DC/DC converter stage of the OBC in hybrid and electric vehicles. The power module features four silicon carbide Power MOSFETs of 2nd generation from STMicroelectronics. Thanks to the well-recognized chip technology, the ACEPACK DMT-32 ensures the best compromise between energy losses and high switching frequency operation mode. This module allows you to create complex topologies with very high power densities as well as high efficiency requirements. The AlN insulated substrate enables optimal thermal performance. Moreover, thanks to the specific design featuring grooves on the molding ensure a high creepage distance.\n\n

HRS1F80GA

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HRS1F80GSMT

.050RECEPTACLESTRIPS.050[1.27]CENTERLINE

HRS1F80GSMT-A

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