512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：566.07 Kbytes 页数：27 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

文件：703.18 Kbytes 页数：29 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

文件：699.64 Kbytes 页数：29 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

文件：697.27 Kbytes 页数：30 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：566.07 Kbytes 页数：27 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：566.07 Kbytes 页数：27 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：566.07 Kbytes 页数：27 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：566.07 Kbytes 页数：27 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：566.07 Kbytes 页数：27 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

文件：566.07 Kbytes 页数：27 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司