512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on

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ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

文件：697.27 Kbytes 页数：30 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

文件：699.64 Kbytes 页数：29 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks

文件：708.48 Kbytes 页数：28 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

文件：703.18 Kbytes 页数：29 Pages

ESMTElite Semiconductor Memory Technology Inc.

晶豪科技晶豪科技股份有限公司

512K x 16Bit x 2Banks Synchronous DRAM

GENERAL DESCRIPTION\nThe M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on eve • JEDEC standard 3.3V power supply\n• LVTTL compatible with multiplexed address\n• Dual banks operation\n• MRS cycle with address key programs\n   - CAS Latency (2 & 3 )\n   - Burst Length (1, 2, 4, 8 & full page)\n   - Burst Type (Sequential & Interleave)\n• All inputs are sampled at the positive g;

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